डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FJPF9020 | PNP Epitaxial Darlington Transistor FJPF9020
FJPF9020
Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High Collector-Base Breakdown Voltage : BVCBO = -550V • High DC Current Gain : hFE = 550 @ VCE = -4V, IC = -1A (Typ.) |
Fairchild Semiconductor |
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FJPF9020 | PNP Epitaxial Darlington Transistor | Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |