FJB102 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor INCHANGE Semiconductor FJB102 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Low Collector-Emitter Saturation Voltage ·100% tested ·Minimum Lot-to-Lot varia

FJB102 — NPN High-Voltage Power Darlington Transistor December 2014 FJB102 NPN High-Voltage Power Darlington Transistor Features • High DC Current Gain : hFE = 1000 at VCE = 4 V, IC = 3 A (Minimum) • Lo