डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FIR3441AG | P-Channel Enhancement Mode Power MOSFET P-Channel Enhancement Mode Power MOSFET
Description
The FIR3441AG uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is su |
First Semiconductor |
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FIR3441AG | P-Channel Enhancement Mode Power MOSFET | First Semiconductor |
www.DataSheet.in | 2017 | संपर्क |