FGH40T65SPD डाटा शीट PDF( Datasheet )

FGH40T65SPD — 650 V, 40 A Field Stop Trench IGBT FGH40T65SPD 650 V, 40 A Field Stop Trench IGBT October 2013 Features • Maximum Junction Temperature : TJ = 175oC • Positive Temperaure Co-efficient for

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SPD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar i

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SPD-F085 Description Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD−F085 offers the optimum performance with both low conduction loss and