FGH40T65SH डाटा शीट PDF( Datasheet )

FGH40T65SH — 650 V, 40 A Field Stop Trench IGBT FGH40T65SH 650 V, 40 A Field Stop Trench IGBT June 2015 Features • Maximum Junction Temperature : TJ = 175oC • Positive Temperature Co-efficient for Easy

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SH Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar in

FGH40T65SHD 650 V, 40 A Field Stop Trench IGBT FGH40T65SHD 650 V, 40 A Field Stop Trench IGBT April 2015 Features • Maximum Junction Temperature : TJ =175oC • Positive Temperature Co-efficient for Easy P

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SHD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar i

FGH40T65SHDF — 650 V, 40 A Field Stop Trench IGBT FGH40T65SHDF 650 V, 40 A Field Stop Trench IGBT May 2014 Features • Maximum Junction Temperature : TJ = 175oC • Positive Temperaure Co-efficient for Ea

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SHDF Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer superior conduction and switching