FGH30S150P डाटा शीट PDF( Datasheet )

IGBT - Shorted-anode 1500 V, 30 A FGH30S150P Description Using advanced field stop trench and shorted−anode technology, ON Semiconductor’s shorted−anode trench IGBTs offer superior conduction and switchin

FGH30S150P — 1500 V, 30 A Shorted-anode IGBT March 2016 FGH30S150P 1500 V, 30 A Shorted-anode IGBT Features • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.85 V @ IC = 30 A • High Input