FGH30S130P डाटा शीट PDF( Datasheet )

FGH30S130P — 1300 V, 30 A Shorted-anode IGBT November 2014 FGH30S130P 1300 V, 30 A Shorted-anode IGBT Features • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.75 V @ IC = 30 A • High In

IGBT - Shorted-Anode 1300 V, 30 A FGH30S130P Description Using advanced field stop trench and shorted−anode technology, ON Semiconductor’s shorted−anode trench IGBTs offer superior conduction and switchin