FGH25N120FTDS डाटा शीट PDF( Datasheet )

FGH25N120FTDS — 1200 V, 25 A Field Stop Trench IGBT November 2013 FGH25N120FTDS 1200 V, 25 A Field Stop Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.60 V @ IC = 25

IGBT - Field Stop, Trench 1200 V, 25 A FGH25N120FTDS Description Using advanced field stop trench technology, ON Semiconductor’s 1200 V trench IGBTs offer the optimum performance for hard switching applicatio