FDT86246 डाटा शीट PDF( Datasheet )

FDT86246 N-Channel Power Trench® MOSFET December 2010 FDT86246 N-Channel Power Trench® MOSFET 150 V, 2 A, 236 mΩ Features General Description „ Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A „ Max rDS(

MOSFET – N-Channel Shielded Gate POWERTRENCH) 150 V, 2 A, 236 mW FDT86246 Description This N−Channel MOSFET is produced using Fairchild onsemi advanced PowerTrench® Process that has been optimized for RDS

FDT86246L N-Channel PowerTrench® MOSFET February 2016 FDT86246L N-Channel PowerTrench® MOSFET 150 V, 2 A, 228 mΩ Features General Description „ Max rDS(on) = 228 mΩ at VGS = 10 V, ID = 2 A „ Max rDS(

MOSFET – N-Channel, POWERTRENCH) 150 V, 2 A, 228 mW FDT86246L General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(on), switch