डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDT86106LZ | MOSFET FDT86106LZ N-Channel PowerTrench® MOSFET
FDT86106LZ
N-Channel PowerTrench® MOSFET
100 V, 3.2 A, 108 mΩ
Features
General Description
January 2013
Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A M |
Fairchild Semiconductor |
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FDT86106LZ | N-Channel MOSFET MOSFET – N-Channel, POWERTRENCH)
100 V, 3.2 A, 108 mW
FDT86106LZ
General Description This N−Channel logic Level MOSFETs are produced using
onsemi’s advanced POWERTRENCH process that has been special tail |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |