FDT86102LZ डाटा शीट PDF( Datasheet )

FDT86102LZ N-Channel PowerTrench® MOSFET November 2010 FDT86102LZ N-Channel PowerTrench® MOSFET 100 V, 6.6 A, 28 mΩ Features „ Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A „ Max rDS(on) = 38 mΩ at VGS

DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) 100 V, 6.6 A, 28 mW FDT86102LZ General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been