FDT1600N10ALZ डाटा शीट PDF( Datasheet )

FDT1600N10ALZ — N-Channel PowerTrench® MOSFET FDT1600N10ALZ N-Channel PowerTrench® MOSFET 100 V, 5.6 A, 160 mΩ November 2013 Features • RDS(on) = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A • RDS(on) =

MOSFET – N-Channel, POWERTRENCH) 100 V, 5.6 A, 160 mW FDT1600N10ALZ General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been tailored to minimize the