FDS8958 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com FDS8958 October 2004 FDS8958 Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fai

FDS8958A April 2008 FDS8958A tm Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semicond

FDS8958A-F085 Dual N & P-Channel PowerTrench® MOSFET FDS8958A-F085 Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors a

FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET February 2010 FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET tm General Description These dual N- and P-Channel enhancement mode power field effe

FDS8958B Dual N & P-Channel PowerTrench® MOSFET FDS8958B Dual N & P-Channel PowerTrench® MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ November 2013 Features Q1: N-Channel

FDS8958B Dual N & P-Channel PowerTrench® MOSFET FDS8958B Dual N & P-Channel PowerTrench® MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features Q1: N-Channel „ Max rDS(on)