डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDS86141 | MOSFET FDS86141 N-Channel Power Trench® MOSFET
May 2015
FDS86141
N-Channel Power Trench® MOSFET
100 V, 7 A, 23 mΩ
Features
General Description
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 3 |
Fairchild Semiconductor |
|
FDS86141 | N-Channel MOSFET FDS86141 N-Channel Power Trench® MOSFET
www.onsemi.com
FDS86141
N-Channel Power Trench® MOSFET
100 V, 7 A, 23 mΩ
Features
General Description
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(o |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |