FDS6673BZ डाटा शीट PDF( Datasheet )

MOSFET – P-Channel, POWERTRENCH) -30 V, -14.5 A, 7.8 mW FDS6673BZ General Description This P−Channel MOSFET is produced using onsemi’s advanced Power Trench process that has been especially tailored to m

www.DataSheet.co.kr FDS6673BZ P-Channel PowerTrench® MOSFET January 2006 FDS6673BZ P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8mΩ General Description This P-Channel MOSFET is produced using Fairchild

FDS6673BZ-F085 P-Channel PowerTrench® MOSFET FDS6673BZ-F085 P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8mΩ General Description Features „ Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A This P-Chann

FDS6673BZ_F085 P-Channel PowerTrench® MOSFET PFD-CSh6a6n7n3eBlZP_oFw08e5rTrench® MOSFET -30V, -14.5A, 7.8mΩ July 2009 General Description This P-Channel MOSFET is produced using Fairchild Semiconductor�