FDPF680N10T डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FDPF680N10T ·FEATURES ·With TO-220F packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 68mΩ@VGS=10V ·100% avalanche tested

FDPF680N10T — N-Channel PowerTrench® MOSFET November 2013 FDPF680N10T N-Channel PowerTrench® MOSFET 100 V, 12 A, 68 mΩ Features • RDS(on) = 54 mΩ (Typ.) @ VGS = 10 V, ID = 6 A • Fast Switching Spee