FDP3682 डाटा शीट PDF( Datasheet )

FDB3682 / FDP3682 N-Channel PowerTrench ® MOSFET FDB3682 / FDP3682 N-Channel PowerTrench® MOSFET 100 V, 32 A, 36 mΩ March 2013 Features • RDS(on) = 32 mΩ ( Typ.) @ VGS = 10 V, ID = 32 A • QG(tot) = 1

MOSFET – N-Channel, POWERTRENCH) 100 V, 32 A, 36 mW FDB3682, FDP3682 Features • RDS(on) = 32 mW (Typ.) @ VGS = 10 V, ID = 32 A • QG(tot) = 18.5 nC (Typ.) @ VGS = 10 V • Low Miller Charge • Low Qrr Bo

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 36mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-