डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDP3632 | N-Channel MOSFET FDB3632 / FDP3632 / FDI3632
April 2003
FDB3632 / FDP3632 / FDI3632
N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ
Features
• r DS(ON) = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = |
Fairchild Semiconductor |
|
FDP3632 | N-Channel MOSFET MOSFET – Power, N-Channel, POWERTRENCH)
100 V, 80 A, 9 mW
FDH3632, FDP3632, FDB3632
Features
• RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A • Qg (tot) = 84 nC (Typ.), VGS = 10 V • Low Miller Charge |
ON Semiconductor |
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FDP3632 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·Drain Source Voltage-
: VDSS ≥100V ·Static drain-source on-resistance:
RDS(on) ≤ 9mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to |
INCHANGE |
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