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FDP2D3N10C डाटा शीट PDF( Datasheet )


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FDP2D3N10C   N-Channel MOSFET

MOSFET – N-Channel, Shielded Gate POWERTRENCH) 100 V, 222 A, 2.3 mW FDP2D3N10C, FDPF2D3N10C General Description This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorp
ON Semiconductor
ON Semiconductor
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FDP2D3N10C   N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 2.3mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot
INCHANGE
INCHANGE
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