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FDP2614 | 200V N-Channel MOSFET FDP2614 — N-Channel PowerTrench® MOSFET
October 2013
FDP2614
N-Channel PowerTrench® MOSFET
200 V, 62 A, 27 mΩ
Features
• RDS(on) = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A • Fast Switching Speed � |
Fairchild Semiconductor |
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FDP2614 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·Drain Source Voltage-
: VDSS ≥ 200V ·Static drain-source on-resistance:
RDS(on) ≤ 27mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot- |
INCHANGE |
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