FDP19N40 डाटा शीट PDF( Datasheet )

FDP19N40 — N-Channel UniFETTM MOSFET FDP19N40 N-Channel UniFETTM MOSFET 400 V, 19 A, 240 mΩ Features • RDS(on) = 200 mΩ (Typ.) @ VGS = 10 V, ID = 9.5 A • Low Gate Charge (Typ. 32 nC) • Low Crss (Typ.

isc N-Channel MOSFET Transistor FDP19N40 FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage : VDSS= 240V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 240mΩ(Max) ·100% avalanche test