FDP047N10 डाटा शीट PDF( Datasheet )

FDP047N10 — N-Channel PowerTrench® MOSFET FDP047N10 N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.7 mΩ November 2013 Features • RDS(on) = 3.9 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Spee

isc N-Channel MOSFET Transistor FDP047N10 ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 4.7mΩ@VGS=10V ·100% avalanche tested ·