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FDP036N10A | N-Channel MOSFET FDP036N10A — N-Channel PowerTrench® MOSFET
FDP036N10A
N-Channel PowerTrench® MOSFET
100 V, 214 A, 3.6 mΩ
November 2013
Features
• RDS(on) = 3.2 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching S |
Fairchild Semiconductor |
|
FDP036N10A | N-Channel MOSFET isc N-Channel MOSFET Transistor
FDP036N10A
·FEATURES ·With TO-220 packaging ·Drain Source Voltage-
: VDSS ≥ 100V ·Static drain-source on-resistance:
RDS(on) ≤ 3.6mΩ@VGS=10V ·100% avalanche tested |
INCHANGE |
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