डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDN86246 | MOSFET FDN86246 N-Channel PowerTrench® MOSFET
December 2010
FDN86246
N-Channel PowerTrench® MOSFET
150 V, 1.6 A, 261 m:
Features
General Description
Max rDS(on) = 261 m: at VGS = 10 V, ID = 1.6 A Max rDS( |
Fairchild Semiconductor |
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FDN86246 | N-Channel MOSFET MOSFET – N-Channel, POWERTRENCH)
150 V, 1.6 A, 261 mW
FDN86246
General Description This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for rDS(on), switc |
ON Semiconductor |
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