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FDN8601 | MOSFET FDN8601 N-Channel PowerTrench® MOSFET
FDN8601
N-Channel PowerTrench® MOSFET
100 V, 2.7 A, 109 m:
July 2010
Features
General Description
Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A Max rDS(on) = |
Fairchild Semiconductor |
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FDN8601 | N-Channel MOSFET SMD Type
Product specification
FDN8601
100 V, 2.7 A, 109 m: Features
Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A High performance trench technology fo |
TY Semiconductor |
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FDN8601 | N-Channel MOSFET MOSFET – N-Channel, POWERTRENCH)
100 V, 2.7 A, 109 mW
FDN8601
General Description This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for rDS(on), switch |
ON Semiconductor |
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