डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDN304P | P-Channel MOSFET FDN304P
January 2001
FDN304P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been o |
Fairchild Semiconductor |
|
FDN304P | P-Channel MOSFET SMD Type
P-Channel MOSFET FDN304P (KDN304P)
MOSFET
■ Features
● VDS (V) =-20V ● ID =-2.4A (VGS =-4.5V) ● RDS(ON) < 52mΩ (VGS =-4.5V) ● RDS(ON) < 70mΩ (VGS =-2.5V) ● RDS(ON) < 100mΩ (VGS |
Kexin |
|
FDN304P | P-Channel MOSFET MOSFET – P-Channel 1.8 V Specified POWERTRENCH)
FDN304P
General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced
low voltage POWERTRENCH process. It has been optimized for battery |
ON Semiconductor |
|
FDN304PZ | P-Channel MOSFET MOSFET – P-Channel, 1.8 V Specified, POWERTRENCH) FDN304PZ
General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced
low voltage POWERTRECH process. It has been optimized for batte |
ON Semiconductor |
|
FDN304PZ | P-Channel MOSFET FDN304PZ
March 2003
FDN304PZ
P-Channel 1.8V Specified PowerTrench® MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been opt |
Fairchild Semiconductor |
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