डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDMS86300 | N-Channel MOSFET FDMS86300 N-Channel PowerTrench® MOSFET
FDMS86300
N-Channel PowerTrench® MOSFET
80 V, 122 A, 3.9 mΩ
Features
Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID = 19 A Max rDS(on) = 5.5 mΩ at VGS = 8 V, ID = 15. |
Fairchild Semiconductor |
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FDMS86300DC | N-Channel MOSFET FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET
March 2012
FDMS86300DC
N-Channel Dual CoolTM Power Trench® MOSFET
80 V, 60 A, 3.1 mΩ
Features
Dual CoolTM Top Side Cooling PQFN package Max rDS( |
Fairchild Semiconductor |
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FDMS86300DC | N-Channel MOSFET MOSFET - POWERTRENCH) Single N-Channel, DUAL COOL)
80 V, 3.1 mW, 110 A
FDMS86300DC
General Description This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH® process that incorporates Shiel |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |