FDMS86200 डाटा शीट PDF( Datasheet )

FDMS86200 MOSFET, N‐Channel, Shielded Gate, POWERTRENCH) 150 V, 35 A, 18 mW General Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH® process that incorporates

FDMS86200 N-Channel Power Trench® MOSFET November 2012 FDMS86200 N-Channel Power Trench® MOSFET 150 V, 49 A, 18 mΩ Features „ Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A „ Max rDS(on) = 21 mΩ at VGS

FDMS86200DC N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOSFET July 2015 FDMS86200DC N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOSFET 150 V, 40 A, 17 mΩ Features General Description „

MOSFET POWERTRENCH), N-Channel, DUAL COOL), Shielded Gate 150 V, 40 A, 17mW FDMS86200DC General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates