डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDMS8460 | MOSFET FDMS8460 N-Channel Power Trench® MOSFET
October 2014
FDMS8460
N-Channel Power Trench® MOSFET
40V, 49A, 2.2m:
Features
General Description
Max rDS(on) = 2.2m: at VGS = 10V, ID = 25A Max rDS(on) = 3 |
Fairchild Semiconductor |
|
FDMS8460 | N-Channel MOSFET MOSFET - N‐Channel, POWERTRENCH)
40 V, 49 A, 2.2 mW
FDMS8460
General Description This N−Channel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH® process that has been especially tailor |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |