FDMS4435BZ डाटा शीट PDF( Datasheet )

FDMS4435BZ P-Channel Power Trench® MOSFET FDMS4435BZ P-Channel PowerTrench® MOSFET -30 V, -18 A, 20 mΩ Features „ Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -9.0 A „ Max rDS(on) = 37 mΩ at VGS = -4.5 V, I

MOSFET – P-Channel, POWERTRENCH) -30 V, -18 A, 20 mW FDMS4435BZ General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to min