FDMS3672 डाटा शीट PDF( Datasheet )

FDMS3672 N-Channel UltraFET Trench MOSFET February 2007 FDMS3672 N-Channel UltraFET Trench MOSFET 100V, 22A, 23mΩ Features General Description „ Max rDS(on) = 23mΩ at VGS = 10V, ID = 7.4A „ Max rDS(on)

MOSFET – N-Channel, UltraFET Trench 100 V, 22 A, 23 mW FDMS3672 General Description UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for R