FDMS3662 डाटा शीट PDF( Datasheet )

FDMS3662 N-Channel Power Trench® MOSFET November 2014 FDMS3662 N-Channel Power Trench® MOSFET 100V, 39A, 14.8mΩ Features General Description „ Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A „ Advanced

MOSFET – N-Channel POWERTRENCH) 100 V, 39 A, 14.8 mW FDMS3662 Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the o