डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDME910PZT | MOSFET FDME910PZT P-Channel PowerTrench® MOSFET
FDME910PZT
P-Channel PowerTrench® MOSFET
-20 V, -8 A, 24 mΩ
Features
Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = |
Fairchild Semiconductor |
|
FDME910PZT | P-Channel MOSFET MOSFET – P-Channel POWERTRENCH)
-20 V, -8 A, 24 mW
FDME910PZT, FDME910PZT-P, FDME910PZT-P-Q
General Description This device is designed specifically for battery charging or load
switching in cellular handset |
ON Semiconductor |
|
FDME910PZT-P | P-Channel MOSFET MOSFET – P-Channel POWERTRENCH)
-20 V, -8 A, 24 mW
FDME910PZT, FDME910PZT-P, FDME910PZT-P-Q
General Description This device is designed specifically for battery charging or load
switching in cellular handset |
ON Semiconductor |
|
FDME910PZT-P-Q | P-Channel MOSFET MOSFET – P-Channel POWERTRENCH)
-20 V, -8 A, 24 mW
FDME910PZT, FDME910PZT-P, FDME910PZT-P-Q
General Description This device is designed specifically for battery charging or load
switching in cellular handset |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |