डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDME820NZT | MOSFET FDME820NZT N-Channel PowerTrench® MOSFET
October 2013
FDME820NZT
N-Channel PowerTrench® MOSFET
20 V, 9 A, 18 mΩ
Features
Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 9 A Max rDS(on) = 24 mΩ at VGS = 2 |
Fairchild Semiconductor |
|
FDME820NZT | N-Channel MOSFET DATA SHEET www.onsemi.com
MOSFET – N-Channel, POWERTRENCH)
20 V, 9 A, 18 mohm
FDME820NZT
General Description This Single N−Channel MOSFET has been designed using
onsemi’s advanced Power Trench process |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |