डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDMD82100 | MOSFET FDMD82100 Dual N-Channel PowerTrench® MOSFET
June 2014
FDMD82100
Dual N-Channel Power Trench® MOSFET
100 V, 25 A, 19 mΩ
Features
General Description
Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 7 A Ma |
Fairchild Semiconductor |
|
FDMD82100 | Dual N-Channel MOSFET MOSFET – Dual N-Channel, POWERTRENCH)
100 V, 25 A, 19 mW
FDMD82100
General Description This device includes two 100 V N−Channel MOSFETs in a dual
Power (3.3 mm X 5 mm) package. HS source and LS Drain inter |
ON Semiconductor |
|
FDMD82100L | MOSFET FDMD82100L Dual N-Channel PowerTrench® MOSFET
June 2014
FDMD82100L
Dual N-Channel PowerTrench® MOSFET
100 V, 24 A, 19.5 mΩ
Features
General Description
Max rDS(on) = 19.5 mΩ at VGS = 10 V, ID = 7 A |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |