FDMC8882 डाटा शीट PDF( Datasheet )

FDMC8882 N-Channel Power Trench® MOSFET FDMC8882 N-Channel Power Trench® MOSFET 30 V, 16 A, 14.3 m: May 2014 Features General Description „ Max rDS(on) = 14.3 m: at VGS = 10 V, ID = 10.5 A „ Max rDS(on

MOSFET – N-Channel, POWERTRENCH) 30 V, 16 A, 14.3 mohm FDMC8882 Description This N−Channel MOSFET is produced using onsemi’s advanced POWETRENCH process that has been especially tailored to minimize the o