FDMC8651 डाटा शीट PDF( Datasheet )

FDMC8651 N-Channel Power Trench® MOSFET July 2008 FDMC8651 N-Channel Power Trench® MOSFET 30 V, 20 A, 6.1 mΩ Features „ Max rDS(on) = 6.1 mΩ at VGS = 4.5 V, ID = 15 A „ Max rDS(on) = 9.3 mΩ at VGS =

MOSFET – N-Channel, POWERTRENCH) 30 V, 20 A, 6.1 mW FDMC8651 General Description This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET const