डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDMC86260 | N-Channel MOSFET MOSFET – N-Channel, Shielded Gate, POWERTRENCH)
150 V, 25 A, 34 mW
FDMC86260
General Description This N−Channel MOSFET is produced using onsemi‘s advanced
POWERTRENCH process that incorporates Shielded Ga |
ON Semiconductor |
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FDMC86260 | N-Channel Power Trench MOSFET FDMC86260 N-Channel Power Trench® MOSFET
FDMC86260
N-Channel Power Trench® MOSFET
150 V, 16 A, 34 mΩ
December 2012
Features
General Description
Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A Max r |
Fairchild Semiconductor |
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FDMC86260ET150 | MOSFET FDMC86260ET150 N-Channel Power Trench® MOSFET
FDMC86260ET150
N-Channel Power Trench® MOSFET
150 V, 25 A, 34 mΩ
January 2015
Features
General Description
Extended TJ rating to 175°C Max rDS(on) = |
Fairchild Semiconductor |
|
FDMC86260ET150 | N-Channel MOSFET MOSFET – N-Channel, POWERTRENCH)
150 V, 25 A, 34 mW
FDMC86260ET150
General Description This N−Channel MOSFET is produced using onsemi‘s advanced
POWERTRENCH process that has been especially tailored to mi |
ON Semiconductor |
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