FDMC86244 डाटा शीट PDF( Datasheet )

FDMC86244 N-Channel Power Trench® MOSFET February 2012 FDMC86244 N-Channel Power Trench® MOSFET 150 V, 9.4 A, 134 mΩ Features „ Max rDS(on) = 134 mΩ at VGS = 10 V, ID = 2.8 A „ Max rDS(on) = 186 mΩ at

MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 150 V, 9.4 A, 134 mW FDMC86244, FDMC86244-L701 General Description This N−Channel MOSFET is produced using ON Semiconductor‘s advanced POWERTRENCH process

MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 150 V, 9.4 A, 134 mW FDMC86244, FDMC86244-L701 General Description This N−Channel MOSFET is produced using ON Semiconductor‘s advanced POWERTRENCH process