FDMC86160 डाटा शीट PDF( Datasheet )

FDMC86160 N-Channel Power Trench® MOSFET January 2013 FDMC86160 N-Channel Power Trench® MOSFET 100 V, 43 A, 14 mΩ Features „ Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A „ Max rDS(on) = 23 mΩ at VGS = 6

MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 100 V, 43 A, 14 mW FDMC86160 General Description This N−Channel MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded G

FDMC86160ET100 N-Channel Shielded Gate PowerTrench® MOSFET FDMC86160ET100 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 43 A, 14 mΩ January 2015 Features General Description „ Extended TJ rating t

MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 100 V, 43 A, 14 mW FDMC86160ET100 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shield