FDMC86102 डाटा शीट PDF( Datasheet )

FDMC86102 N-Channel Power Trench® MOSFET March 2012 FDMC86102 N-Channel Power Trench® MOSFET 100 V, 20 A, 24 mΩ Features „ Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 38 mΩ at VGS = 6 V

MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 100 V, 20 A, 24 mW FDMC86102 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded G

FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 18 A, 23 mΩ June 2014 Features General Description „ Shielded Gate MOSFET Technology

MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 100 V, 18 A, 23 mW FDMC86102L General Description This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded G

FDMC86102LZ N-Channel Power Trench® MOSFET April 2011 FDMC86102LZ N-Channel Power Trench® MOSFET 100 V, 22 A, 24 mΩ Features „ Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 6.5 A „ Max rDS(on) = 35 mΩ at VGS

MOSFET - N-Channel, Shielded Gate, POWERTRENCH) 100 V, 24 mW , 22 A FDMC86102LZ Description This N−Channel logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that incorporates Shi