FDMC86012 डाटा शीट PDF( Datasheet )

FDMC86012 N-Channel Power Trench® MOSFET October 2012 FDMC86012 N-Channel Power Trench® MOSFET 30 V, 88 A, 2.7 mΩ Features „ Max rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 23 A „ Max rDS(on) = 4.7 mΩ at VG

MOSFET – N-Channel, POWERTRENCH) 30 V, 88 A, 2.7 mW FDMC86012 General Description This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET const