डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDMC610P | MOSFET FDMC610P P-Channel PowerTrench® MOSFET
FDMC610P
P-Channel PowerTrench® MOSFET
-12 V, -80 A, 3.9 mΩ
Features
Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID |
Fairchild Semiconductor |
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FDMC610P | P-Channel MOSFET MOSFET – P-Channel, POWERTRENCH)
-12 V, -80 A, 3.9 mW
FDMC610P
General Description This P−Channel MOSFET has been designed specifically to improve
the overall efficiency and to minimize switch node ringing |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |