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FDMC4435BZ | MOSFET FDMC4435BZ P-Channel Power Trench® MOSFET
FDMC4435BZ
P-Channel Power Trench® MOSFET
-30 V, -18 A, 20 mΩ
November 2015
Features
General Description
Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -8.5 A |
Fairchild Semiconductor |
|
FDMC4435BZ | P-Channel MOSFET MOSFET – P-Channel, POWERTRENCH)
-30 V, -18 A, 20 mW
FDMC4435BZ, FDMC4435BZ-F127, FDMC4435BZ-F127-L701
General Description This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process tha |
ON Semiconductor |
|
FDMC4435BZ-F127 | P-Channel MOSFET MOSFET – P-Channel, POWERTRENCH)
-30 V, -18 A, 20 mW
FDMC4435BZ, FDMC4435BZ-F127, FDMC4435BZ-F127-L701
General Description This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process tha |
ON Semiconductor |
|
FDMC4435BZ-F127-L701 | P-Channel MOSFET MOSFET – P-Channel, POWERTRENCH)
-30 V, -18 A, 20 mW
FDMC4435BZ, FDMC4435BZ-F127, FDMC4435BZ-F127-L701
General Description This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process tha |
ON Semiconductor |
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