डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDH038AN08A1 | N-Channel MOSFET FDH038AN08A1
February 2003
FDH038AN08A1
N-Channel PowerTrench® MOSFET 75V, 80A, 3.8mΩ
Features
• r DS(ON) = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 125nC (Typ.), VGS = 10V • Internal Gate Re |
Fairchild Semiconductor |
|
FDH038AN08A1 | N-Channel MOSFET MOSFET – N-Channel, POWERTRENCH)
75 V, 80 A, 3.8 mW
FDH038AN08A1
Features
RDS(ON) = 3.5 mW (Typ.), VGS = 10 V, ID = 80 A Qg (tot) = 125 nC (Typ.), VGS = 10 V Low Miller Charge Low Qrr Body Di |
ON Semiconductor |
|
FDH047AN08A0 | N-Channel MOSFET FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
June 2004
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
N-Channel PowerTrench® MOSFET 75V, 80A, 4.7mΩ
Features
• rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • |
Fairchild Semiconductor |
|
FDH047AN08A0 | N-Channel MOSFET MOSFET – N-Channel, POWERTRENCH)
75 V, 80 A, 4.7 mW
FDH047AN08A0, FDP047AN08A0
Features
RDS(ON) = 4.0 mW (Typ.), VGS = 10 V, ID = 80 A Qg(TOT) = 92 nC (Typ.), VGS = 10 V Low Miller Charge Low |
ON Semiconductor |
|
FDH055N15A | MOSFET FDH055N15A — N-Channel PowerTrench® MOSFET
March 2015
FDH055N15A
N-Channel PowerTrench® MOSFET
150 V, 167 A, 5.9 mΩ
Features
• RDS(on) = 4.8 mΩ (Typ.) @ VGS = 10 V, ID = 120 A • Fast Switching Spee |
Fairchild Semiconductor |
|
FDH055N15A | N-Channel MOSFET MOSFET – N-Channel, POWERTRENCH)
150 V, 167 A, 5.9 mW
FDH055N15A
Description This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been tailored to minimize the on−state |
ON Semiconductor |
|
FDH1000 | Silicon Diode Fairchild
Diode FDH1000
Datasheet
Silicon – Diode FDH1000
50V/200mA
DATASHEET
OEM – Fairchild
Source: Fairchild Databook 1978
Datasheet Rev. 1.3 – 03/19 - data without warranty / liability
Fairchil |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |