FDH डाटा शीट PDF( Datasheet )

FDH038AN08A1 February 2003 FDH038AN08A1 N-Channel PowerTrench® MOSFET 75V, 80A, 3.8mΩ Features • r DS(ON) = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 125nC (Typ.), VGS = 10V • Internal Gate Re

MOSFET – N-Channel, POWERTRENCH) 75 V, 80 A, 3.8 mW FDH038AN08A1 Features  RDS(ON) = 3.5 mW (Typ.), VGS = 10 V, ID = 80 A  Qg (tot) = 125 nC (Typ.), VGS = 10 V  Low Miller Charge  Low Qrr Body Di

FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 June 2004 FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench® MOSFET 75V, 80A, 4.7mΩ Features • rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A •

MOSFET – N-Channel, POWERTRENCH) 75 V, 80 A, 4.7 mW FDH047AN08A0, FDP047AN08A0 Features  RDS(ON) = 4.0 mW (Typ.), VGS = 10 V, ID = 80 A  Qg(TOT) = 92 nC (Typ.), VGS = 10 V  Low Miller Charge  Low

FDH055N15A — N-Channel PowerTrench® MOSFET March 2015 FDH055N15A N-Channel PowerTrench® MOSFET 150 V, 167 A, 5.9 mΩ Features • RDS(on) = 4.8 mΩ (Typ.) @ VGS = 10 V, ID = 120 A • Fast Switching Spee

MOSFET – N-Channel, POWERTRENCH) 150 V, 167 A, 5.9 mW FDH055N15A Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on−state

Fairchild Diode FDH1000 Datasheet Silicon – Diode FDH1000 50V/200mA DATASHEET OEM – Fairchild Source: Fairchild Databook 1978 Datasheet Rev. 1.3 – 03/19 - data without warranty / liability Fairchil