FDG6301N डाटा शीट PDF( Datasheet )

July 1999 FDG6301N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS

Digital FET, Dual N-Channel FDG6301N General Description These dual N−Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DM

Dual N-Channel, Digital FET FDG6301N-F085 Features • 25 V, 0.22 A Continuous, 0.65 A Peak • RDS(ON) = 4 Ω @ VGS = 4.5 V, • RDS(ON) = 5 Ω @ VGS = 2.7 V. • Very Low Level Gate Drive Requirements allow