FDG1024NZ डाटा शीट PDF( Datasheet )

MOSFET – Dual N-Channel, POWERTRENCH® 20 V, 1.2 A, 175 mW FDG1024NZ Description This dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, hi

FDG1024NZ Dual N-Channel Power Trench® MOSFET August 2009 FDG1024NZ Dual N-Channel PowerTrench® MOSFET 20 V, 1.2 A, 175 mΩ Features „ Max rDS(on) = 175 mΩ at VGS = 4.5 V, ID = 1.2 A „ Max rDS(on) = 21