FDD8N50NZ डाटा शीट PDF( Datasheet )

FDD8N50NZ — N-Channel UniFETTM II MOSFET FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 mΩ Features • RDS(on) = 770 mΩ (Typ.) @ VGS = 10 V, ID = 3.25 A • Low Gate Charge (Typ. 14 nC) • Low

Isc N-Channel MOSFET Transistor FDD8N50NZ ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for