FDD8874 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 116A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.1mΩ(Max) ·100% avalanche tested ·Min

FDD8874 / FDU8874 March 2015 FDD8874 / FDU8874 N-Channel PowerTrench® MOSFET 30V, 116A, 5.1mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of D