डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDD3860 | MOSFET FDD3860 N-Channel PowerTrench® MOSFET
FDD3860
N-Channel PowerTrench® MOSFET
100 V, 29 A, 36 mΩ
Features
Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A High Performance Trench Technology for Extremely |
Fairchild Semiconductor |
|
FDD3860 | N-Channel PowerTrench MOSFET FDD3860 N-Channel PowerTrench® MOSFET
FDD3860
N-Channel PowerTrench® MOSFET
100 V, 29 A, 36 mΩ
Features
Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A High Performance Trench Technology for Extremely |
ON Semiconductor |
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